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Oral presentation

GPU acceleration of first-principles electronic structure calculation software OpenMX and its application to modified-DNA

Kawai, Hiroyuki*; Sekikawa, Takuya; Ozaki, Taisuke*; Furuya, Shinnosuke*; Ono, Yoshiaki*

no journal, , 

First-principles electronic structure calculation software OpenMX is a calculation code based on density functional theory, and is mainly used to obtain the most stable structures and electronic states of materials. In this study, we attempted to develop a method to accelerate OpenMX calculations using a GPU (Graphics Processing Unit), which is usually used for image processing, and succeeded in reducing the calculation time to about one-half of that using the same number of CPUs in a benchmark calculation on DNA. The benchmark calculation on DNA succeeded in reducing the calculation time by about one-half compared to the same number of CPUs. We then applied the method developed in this study to modified-DNA (DNA in which some of the atoms constituting a base pair are replaced with transition metals or organic molecules), which has been investigated using OpenMX, and verified the degree of speed-up. Details of the obtained modified-DNA, including its electronic state, will be presented on the day.

Oral presentation

Carrier doping effect of Ti, Zr, and Hf substitution in excitonic insulator candidate material Ta$$_2$$NiSe$$_5$$

Tsuchida, Shun*; Hirose, Yusuke*; Sekikawa, Takuya; Ono, Yoshiaki*; Settai, Rikio*

no journal, , 

Excitonic insulators have the property that the entire crystal becomes an insulator due to the collective behavior of electrons and holes bound together in the crystal, and they have begun to attract attention as a new physical property. In this study, we focused on Ta$$_2$$NiSe$$_5$$, which is one of the excitonic insulator candidates, but its synthesis itself is difficult and its physical properties have not yet been clarified. The electrical resistivity of M=Ti, Zr, and Hf at low temperatures is 5 to 6 orders of magnitude lower than that of the parent material. Furthermore, when titanium is substituted for tantalum (M=Ti), the electrical resistivity of samples with composition ratio x less than 0.06 is semiconducting, while the electrical resistivity of the high temperature phase behaves metallic when x = 0.06 or higher. The phase transition shown in this study may be a new insight into the realization of excitonic insulators.

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